Ordering and shape of self-assembled InAs quantum dots on GaAs„001..

نویسندگان

  • K. Zhang
  • W. Hansen
  • J. Falta
چکیده

Quantitative grazing-incidence small-angle x-ray scattering experiments have been performed on self-assembled InAs quantum dots ~QDs! grown by molecular-beam epitaxy. We find pronounced nonspecular diffuse scattering satellite peaks with high diffraction orders, indicating a lateral ordering in the spatial positions of the InAs QDs. The mean-dot–dot distance and correlation lengths of the dot lateral distribution are found to be anisotropic. We observe the sharpest dot distribution in the @110# direction. Additional broad diffraction peaks are observed and associated with dot facet crystal truncation rods of the $111% and $101% facet families. This suggests an octagonal-based dot shape. © 2000 American Institute of Physics. @S0003-6951~00!02716-9#

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تاریخ انتشار 2000